Name: SI8497DB-T2-E1
Brand: Vishay Siliconix
SKU: SI8497DB-T2-E1
Price: 0.22 USD
Availability: InStock

REF: SI8497DB-T2-E1 Vishay Siliconix

SI8497DB-T2-E1

Vishay Siliconix

MOSFET P-CH 30V 13A 6MICROFOOT

SI8497DB-T2-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 13A 6MICROFOOT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UFBGA.

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In Stock: 6,779

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2V, 4.5V
Rds On (Max) @ Id, Vgs	53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.77W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-microfoot
Package / Case	6-UFBGA