Name: SI8469DB-T2-E1
Brand: Vishay Siliconix
SKU: SI8469DB-T2-E1
Availability: InStock

REF: SI8469DB-T2-E1 Vishay Siliconix

SI8469DB-T2-E1

MOSFET P-CH 8V 4.6A 4MICROFOOT

SI8469DB-T2-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 8V 4.6A 4MICROFOOT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-UFBGA.

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In Stock: 8,299

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	64mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 4.5 V

Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 4 V
FET Feature	-
Power Dissipation (Max)	780mW (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA