Name: SI8425DB-T1-E1
Brand: Vishay Siliconix
SKU: SI8425DB-T1-E1
Price: 0.62 USD
Availability: InStock

REF: SI8425DB-T1-E1 Vishay Siliconix

SI8425DB-T1-E1

Vishay Siliconix

MOSFET P-CH 20V 4WLCSP

SI8425DB-T1-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 4WLCSP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-UFBGA, WLCSP.

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In Stock: 6,831

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	23mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V

Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-WLCSP (1.6x1.6)
Package / Case	4-UFBGA, WLCSP