SI8402DB-T1-E1 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI8402DB-T1-E1 Vishay Siliconix
SI8402DB-T1-E1

Vishay Siliconix

MOSFET N-CH 20V 5.3A 2X2 4-MFP

SI8402DB-T1-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 5.3A 2X2 4-MFP. Key specifications: mounting type Surface Mount, package / case 4-XFBGA, CSPBGA.

In Stock: 4,558

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs37mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 4.5 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-XFBGA, CSPBGA

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