SI7962DP-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI7962DP-T1-E3 Vishay Siliconix
SI7962DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 7.1A PPAK SO-8

SI7962DP-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 40V 7.1A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 1.4W.

In Stock: 9,350

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C7.1A
Rds On (Max) @ Id, Vgs17mOhm @ 11.1A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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