SI7911DN-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI7911DN-T1-E3 Vishay Siliconix
SI7911DN-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 4.2A 1212-8

SI7911DN-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 20V 4.2A 1212-8. Key specifications: mounting type Surface Mount, package / case PowerPAK® 1212-8 Dual, power - max 1.3W.

In Stock: 5,285

Specifications

14 parameters
Product StatusObsolete
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.2A
Rds On (Max) @ Id, Vgs51mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.3W
Operating Temperature-
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

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