Name: SI7655DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7655DN-T1-GE3
Price: 1.72 USD
Availability: InStock

REF: SI7655DN-T1-GE3 Vishay Siliconix

SI7655DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 40A PPAK1212-8S

SI7655DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 40A PPAK1212-8S. Key specifications: mounting type Surface Mount, operating temperature -50°C ~ 150°C (TJ), package / case PowerPAK® 1212-8S.

Datasheet Request a Quote

In Stock: 4,031

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	225 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	6600 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S