Name: SI7615BDN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7615BDN-T1-GE3
Availability: InStock

REF: SI7615BDN-T1-GE3 Vishay Siliconix

SI7615BDN-T1-GE3

MOSFET P-CH 20V 29A/104A PPAK

SI7615BDN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 29A/104A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

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In Stock: 3,031

Specifications

17 parameters

Product Status	Discontinued at Digi-Key
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4890 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8