SI7601DN-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI7601DN-T1-E3 Vishay Siliconix
SI7601DN-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 16A PPAK1212-8

SI7601DN-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 16A PPAK1212-8. Key specifications: mounting type Surface Mount, operating temperature -50°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

In Stock: 9,554

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs19.2mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1870 pF @ 10 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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