SI7462DP-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI7462DP-T1-E3 Vishay Siliconix
SI7462DP-T1-E3

Vishay Siliconix

MOSFET N-CH 200V 2.6A PPAK SO-8

SI7462DP-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 200V 2.6A PPAK SO-8. Key specifications: mounting type Surface Mount, package / case PowerPAK® SO-8.

In Stock: 3,742

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs130mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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