SI7457DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI7457DP-T1-GE3 Vishay Siliconix
SI7457DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 100V 28A PPAK SO-8

SI7457DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 100V 28A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

In Stock: 6,082

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs42mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5230 pF @ 50 V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 83.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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