SI7326DN-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI7326DN-T1-GE3 Vishay Siliconix
SI7326DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 6.5A PPAK 1212-8

SI7326DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 6.5A PPAK 1212-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

In Stock: 2,545

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 5 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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