Name: SI7317DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7317DN-T1-GE3
Price: 1.23 USD
Availability: InStock

REF: SI7317DN-T1-GE3 Vishay Siliconix

SI7317DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 150V 2.8A PPAK1212-8

SI7317DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 150V 2.8A PPAK1212-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

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In Stock: 6,192

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.8 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	365 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 19.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8