Name: SI7252DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7252DP-T1-GE3
Price: 2.27 USD
Availability: InStock

REF: SI7252DP-T1-GE3 Vishay Siliconix

SI7252DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 36.7A PPAK 8SO

SI7252DP-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 100V 36.7A PPAK 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 46W.

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In Stock: 7,204

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	36.7A
Rds On (Max) @ Id, Vgs	18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1170pF @ 50V
Power - Max	46W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual