Name: SI7120DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7120DN-T1-GE3
Availability: InStock

REF: SI7120DN-T1-GE3 Vishay Siliconix

SI7120DN-T1-GE3

MOSFET N-CH 60V 6.3A 1212-8

SI7120DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 6.3A 1212-8. Key specifications: mounting type Surface Mount, package / case PowerPAK® 1212-8.

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In Stock: 8,452

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8