Name: SI7100DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7100DN-T1-E3
Availability: InStock

REF: SI7100DN-T1-E3 Vishay Siliconix

SI7100DN-T1-E3

MOSFET N-CH 8V 35A PPAK1212-8

SI7100DN-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 8V 35A PPAK1212-8. Key specifications: mounting type Surface Mount, operating temperature -50°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

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In Stock: 4,325

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 8 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	3810 pF @ 4 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8