Name: SI6562CDQ-T1-GE3
Brand: Vishay Siliconix
SKU: SI6562CDQ-T1-GE3
Price: 1.07 USD
Availability: InStock

REF: SI6562CDQ-T1-GE3 Vishay Siliconix

SI6562CDQ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6.7A 8-TSSOP

SI6562CDQ-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 6.7A 8-TSSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-TSSOP (0.173", 4.40mm Width), power - max 1.6W, 1.7W.

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In Stock: 4,564

Specifications

14 parameters

Product Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6.7A, 6.1A
Rds On (Max) @ Id, Vgs	22mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 10V
Power - Max	1.6W, 1.7W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP