Name: SI6473DQ-T1-GE3
Brand: Vishay Siliconix
SKU: SI6473DQ-T1-GE3
Availability: InStock

REF: SI6473DQ-T1-GE3 Vishay Siliconix

SI6473DQ-T1-GE3

MOSFET P-CH 20V 6.2A 8TSSOP

SI6473DQ-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 6.2A 8TSSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-TSSOP (0.173", 4.40mm Width).

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In Stock: 4,470

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	12.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 5 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	1.08W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)