Name: SI6467BDQ-T1-GE3
Brand: Vishay Siliconix
SKU: SI6467BDQ-T1-GE3
Availability: InStock

REF: SI6467BDQ-T1-GE3 Vishay Siliconix

SI6467BDQ-T1-GE3

MOSFET P-CH 12V 6.8A 8TSSOP

SI6467BDQ-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 12V 6.8A 8TSSOP. Key specifications: mounting type Surface Mount, package / case 8-TSSOP (0.173", 4.40mm Width).

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In Stock: 9,226

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	12.5mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 450µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 4.5 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)