Name: SI6463BDQ-T1-E3
Brand: Vishay Siliconix
SKU: SI6463BDQ-T1-E3
Availability: InStock

REF: SI6463BDQ-T1-E3 Vishay Siliconix

SI6463BDQ-T1-E3

MOSFET P-CH 20V 6.2A 8-TSSOP

SI6463BDQ-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 6.2A 8-TSSOP. Key specifications: mounting type Surface Mount, package / case 8-TSSOP (0.173", 4.40mm Width).

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In Stock: 6,480

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	15mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 5 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)