SI5915BDC-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI5915BDC-T1-E3 Vishay Siliconix
SI5915BDC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 8V 4A 1206-8

SI5915BDC-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 8V 4A 1206-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SMD, Flat Lead, power - max 3.1W.

In Stock: 1,032

Specifications

14 parameters
Product StatusObsolete
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs70mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 4V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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