Name: SI5906DU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5906DU-T1-GE3
Availability: InStock

REF: SI5906DU-T1-GE3 Vishay Siliconix

SI5906DU-T1-GE3

MOSFET 2N-CH 30V 6A PPAK FET

SI5906DU-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 30V 6A PPAK FET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® ChipFET™ Dual, power - max 10.4W.

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In Stock: 1,438

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A
Rds On (Max) @ Id, Vgs	31mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 15V
Power - Max	10.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Dual
Supplier Device Package	PowerPAK® ChipFet Dual