SI5905DC-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI5905DC-T1-GE3 Vishay Siliconix
SI5905DC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 8V 3A 1206-8

SI5905DC-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 8V 3A 1206-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SMD, Flat Lead, power - max 1.1W.

In Stock: 4,315

Specifications

14 parameters
Product StatusObsolete
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C3A
Rds On (Max) @ Id, Vgs90mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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