SI5902BDC-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI5902BDC-T1-E3 Vishay Siliconix
SI5902BDC-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 4A 1206-8

SI5902BDC-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 30V 4A 1206-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SMD, Flat Lead, power - max 3.12W.

In Stock: 7,951

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 15V
Power - Max3.12W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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