Name: SI5857DU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5857DU-T1-GE3
Availability: InStock

REF: SI5857DU-T1-GE3 Vishay Siliconix

SI5857DU-T1-GE3

MOSFET P-CH 20V 6A PPAK CHIPFET

SI5857DU-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 6A PPAK CHIPFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® ChipFET™ Single.

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In Stock: 1,643

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	480 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	2.3W (Ta), 10.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® ChipFET™ Single
Package / Case	PowerPAK® ChipFET™ Single