SI5519DU-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI5519DU-T1-GE3 Vishay Siliconix
SI5519DU-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFETS

SI5519DU-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 6A CHIPFETS. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® ChipFET™ Dual, power - max 10.4W.

In Stock: 8,572

Specifications

14 parameters
Product StatusObsolete
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs36mOhm @ 6.1A, 4.5V
Vgs(th) (Max) @ Id1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 10V
Power - Max10.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® ChipFET™ Dual
Supplier Device PackagePowerPAK® ChipFet Dual

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