SI5515CDC-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI5515CDC-T1-E3 Vishay Siliconix
SI5515CDC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

SI5515CDC-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 4A 1206-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SMD, Flat Lead, power - max 3.1W.

In Stock: 2,218

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds632pF @ 10V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

Need a Quote for SI5515CDC-T1-E3?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →