Name: SI5511DC-T1-GE3
Brand: Vishay Siliconix
SKU: SI5511DC-T1-GE3
Availability: InStock

REF: SI5511DC-T1-GE3 Vishay Siliconix

SI5511DC-T1-GE3

MOSFET N/P-CH 30V 4A 1206-8

SI5511DC-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 30V 4A 1206-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SMD, Flat Lead, power - max 3.1W, 2.6W.

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In Stock: 3,157

Specifications

14 parameters

Product Status	Obsolete
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4A, 3.6A
Rds On (Max) @ Id, Vgs	55mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V
Power - Max	3.1W, 2.6W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	1206-8 ChipFET™