Name: SI5509DC-T1-GE3
Brand: Vishay Siliconix
SKU: SI5509DC-T1-GE3
Availability: InStock

REF: SI5509DC-T1-GE3 Vishay Siliconix

SI5509DC-T1-GE3

MOSFET N/P-CH 20V 6.1A 1206-8

SI5509DC-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 6.1A 1206-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SMD, Flat Lead, power - max 4.5W.

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In Stock: 8,400

Specifications

14 parameters

Product Status	Obsolete
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6.1A, 4.8A
Rds On (Max) @ Id, Vgs	52mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 10V
Power - Max	4.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	1206-8 ChipFET™