Name: SI5499DC-T1-GE3
Brand: Vishay Siliconix
SKU: SI5499DC-T1-GE3
Availability: InStock

REF: SI5499DC-T1-GE3 Vishay Siliconix

SI5499DC-T1-GE3

MOSFET P-CH 8V 6A 1206-8 CHIPFET

SI5499DC-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 8V 6A 1206-8 CHIPFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SMD, Flat Lead.

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In Stock: 1,304

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	36mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 8 V

Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1290 pF @ 4 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 6.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	1206-8 ChipFET™
Package / Case	8-SMD, Flat Lead