SI5485DU-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI5485DU-T1-GE3 Vishay Siliconix
SI5485DU-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 12A PPAK

SI5485DU-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 12A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® ChipFET™ Single.

In Stock: 5,068

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs25mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42 nC @ 8 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 10 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® ChipFET™ Single
Package / CasePowerPAK® ChipFET™ Single

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