SI5468DC-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI5468DC-T1-GE3 Vishay Siliconix
SI5468DC-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 6A 1206-8

SI5468DC-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 6A 1206-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SMD, Flat Lead.

In Stock: 3,000

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs28mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds435 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 5.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead

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