Name: SI4916DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4916DY-T1-GE3
Availability: InStock

REF: SI4916DY-T1-GE3 Vishay Siliconix

SI4916DY-T1-GE3

MOSFET 2N-CH 30V 10A 8-SOIC

SI4916DY-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 30V 10A 8-SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 3.3W, 3.5W.

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In Stock: 3,680

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A, 10.5A
Rds On (Max) @ Id, Vgs	18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	3.3W, 3.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC