Name: SI4910DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4910DY-T1-GE3
Availability: InStock

REF: SI4910DY-T1-GE3 Vishay Siliconix

SI4910DY-T1-GE3

MOSFET 2N-CH 40V 7.6A 8-SOIC

SI4910DY-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 40V 7.6A 8-SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 3.1W.

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In Stock: 1,813

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	7.6A
Rds On (Max) @ Id, Vgs	27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	855pF @ 20V
Power - Max	3.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC