Name: SI4833BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4833BDY-T1-GE3
Availability: InStock

REF: SI4833BDY-T1-GE3 Vishay Siliconix

SI4833BDY-T1-GE3

MOSFET P-CHANNEL 30V 4.6A 8SOIC

SI4833BDY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CHANNEL 30V 4.6A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

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In Stock: 8,965

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	68mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 15 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	2.75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)