SI4818DY-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI4818DY-T1-E3 Vishay Siliconix
SI4818DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

SI4818DY-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 30V 5.3A 8-SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 1W, 1.25W.

In Stock: 6,022

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.3A, 7A
Rds On (Max) @ Id, Vgs22mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1W, 1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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