Name: SI4666DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4666DY-T1-GE3
Availability: InStock

REF: SI4666DY-T1-GE3 Vishay Siliconix

SI4666DY-T1-GE3

MOSFET N-CH 25V 16.5A 8SO

SI4666DY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 25V 16.5A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

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In Stock: 4,737

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1145 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)