SI4590DY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI4590DY-T1-GE3 Vishay Siliconix
SI4590DY-T1-GE3

Vishay Siliconix

MOSFET N/P CHAN 100V SO8 DUAL

SI4590DY-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P CHAN 100V SO8 DUAL. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 2.4W, 3.4W.

In Stock: 8,994

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3.4A, 2.8A
Rds On (Max) @ Id, Vgs57mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds360pF @ 50V
Power - Max2.4W, 3.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Need a Quote for SI4590DY-T1-GE3?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →