SI4562DY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI4562DY-T1-GE3 Vishay Siliconix
SI4562DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 8-SOIC

SI4562DY-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 8-SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 2W.

In Stock: 6,593

Specifications

14 parameters
Product StatusObsolete
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs25mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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