SI4462DY-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI4462DY-T1-E3 Vishay Siliconix
SI4462DY-T1-E3

Vishay Siliconix

MOSFET N-CH 200V 1.15A 8-SOIC

SI4462DY-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 200V 1.15A 8-SOIC. Key specifications: mounting type Surface Mount, package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 1,745

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C1.15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs480mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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