SI4434ADY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI4434ADY-T1-GE3 Vishay Siliconix
SI4434ADY-T1-GE3

Vishay Siliconix

MOSFET N-CH 250V 2.8A/4.1A 8SO

SI4434ADY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 250V 2.8A/4.1A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 7,907

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs150mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 125 V
FET Feature-
Power Dissipation (Max)2.9W (Ta), 6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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