SI4413DDY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI4413DDY-T1-GE3 Vishay Siliconix
SI4413DDY-T1-GE3

Vishay Siliconix

MOSFET P-CHANNEL 8SOIC

SI4413DDY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CHANNEL 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 125°C, package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 4,679

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs114 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds4780 pF @ 15 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 125°C
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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