SI4403CDY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI4403CDY-T1-GE3 Vishay Siliconix
SI4403CDY-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 13.4A 8SO

SI4403CDY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 13.4A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 495

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C13.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs15.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2380 pF @ 10 V
FET Feature-
Power Dissipation (Max)5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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