Name: SI4190DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4190DY-T1-GE3
Availability: InStock

REF: SI4190DY-T1-GE3 Vishay Siliconix

SI4190DY-T1-GE3

MOSFET N-CH 100V 20A 8-SOIC

SI4190DY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 100V 20A 8-SOIC. Key specifications: mounting type Surface Mount, package / case 8-SOIC (0.154", 3.90mm Width).

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In Stock: 8,074

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)