Name: SI4090BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4090BDY-T1-GE3
Price: 1.56 USD
Availability: InStock

REF: SI4090BDY-T1-GE3 Vishay Siliconix

SI4090BDY-T1-GE3

Vishay Siliconix

N-CHANNEL 100-V (D-S) MOSFET SO-

SI4090BDY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 100-V (D-S) MOSFET SO-. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

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In Stock: 6,785

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	12.2A (Ta), 18.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3570 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 7.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)