SI4062DY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI4062DY-T1-GE3 Vishay Siliconix
SI4062DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 32.1A 8SO

SI4062DY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 32.1A 8SO. Key specifications: mounting type Surface Mount, package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 7,851

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C32.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3175 pF @ 30 V
FET Feature-
Power Dissipation (Max)7.8W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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