SI4010DY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI4010DY-T1-GE3 Vishay Siliconix
SI4010DY-T1-GE3

Vishay Siliconix

MOSFET N-CHANNEL 30V 31.3A 8SO

SI4010DY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CHANNEL 30V 31.3A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TA), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 1,696

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C31.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3595 pF @ 15 V
FET Feature-
Power Dissipation (Max)6W (Tc)
Operating Temperature-55°C ~ 150°C (TA)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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