SI3911DV-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI3911DV-T1-E3 Vishay Siliconix
SI3911DV-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 1.8A 6TSOP

SI3911DV-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 20V 1.8A 6TSOP. Key specifications: mounting type Surface Mount, package / case SOT-23-6 Thin, TSOT-23-6, power - max 830mW.

In Stock: 9,363

Specifications

14 parameters
Product StatusObsolete
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.8A
Rds On (Max) @ Id, Vgs145mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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