SI3905DV-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI3905DV-T1-GE3 Vishay Siliconix
SI3905DV-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 8V 6-TSOP

SI3905DV-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 8V 6-TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6, power - max 1.15W.

In Stock: 4,912

Specifications

14 parameters
Product StatusObsolete
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs125mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.15W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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