SI3588DV-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI3588DV-T1-E3 Vishay Siliconix
SI3588DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 2.5A 6TSOP

SI3588DV-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 2.5A 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6, power - max 830mW, 83mW.

In Stock: 4,220

Specifications

14 parameters
Product StatusObsolete
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.5A, 570mA
Rds On (Max) @ Id, Vgs80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW, 83mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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